KQD3P50 MOSFET Transistor

The KQD3P50 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQD3P50 transistor as follows.

KQD3P50 Transistor Specification

Transistor Code		KQD3P50
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.9Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		18nC

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