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KQB6N70 MOSFET Transistor

The KQB6N70 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQB6N70 transistor as follows.

Circuit diagram symbol of the KQB6N70 transistor

KQB6N70 Transistor Specification

Transistor Code KQB6N70
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 142W
Drain-Source Capacitance 125pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 30nC

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