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KQB2N60 MOSFET Transistor

The KQB2N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQB2N60 transistor as follows.

Circuit diagram symbol of the KQB2N60 transistor

KQB2N60 Transistor Specification

Transistor Code KQB2N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.7Ohm
Power Dissipation (Maximum) PD 64W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 9nC

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