KQB2N30 MOSFET Transistor

The KQB2N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQB2N30 transistor as follows.

KQB2N30 Transistor Specification

Transistor Code		KQB2N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.7Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		3.7nC

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