KQB27P06 MOSFET Transistor

The KQB27P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQB27P06 transistor as follows.

KQB27P06 Transistor Specification

Transistor Code		KQB27P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		185nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		33nC

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