KP8N65D MOSFET Transistor

The KP8N65D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KP8N65D transistor as follows.

KP8N65D Transistor Specification

Transistor Code		KP8N65D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.62Ohm
Power Dissipation (Maximum)	PD	78W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		21nC

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