KMB8D0P30QA MOSFET Transistor

The KMB8D0P30QA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB8D0P30QA transistor as follows.

KMB8D0P30QA Transistor Specification

Transistor Code		KMB8D0P30QA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		FLP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		295pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.8nS
Total Gate Charge		28.2nC

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