KMB7D6NP30Q MOSFET Transistor

The KMB7D6NP30Q is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB7D6NP30Q transistor as follows.

KMB7D6NP30Q Transistor Specification

Transistor Code		KMB7D6NP30Q
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		FLP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.6(5.3)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014(0.035)Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		213(161)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27.5(20.5)nS

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