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KMB5D5NP30Q MOSFET Transistor

The KMB5D5NP30Q is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB5D5NP30Q transistor as follows.

Circuit diagram symbol of the KMB5D5NP30Q transistor

KMB5D5NP30Q Transistor Specification

Transistor Code KMB5D5NP30Q
Transistor Type MOSFET
Control Channel Type NP-Channel
Package FLP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.5(4.5)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.028(0.045)Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 155(116)pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9.7(4.7)nS

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