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KMB4D0N30SA MOSFET Transistor

The KMB4D0N30SA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB4D0N30SA transistor as follows.

Circuit diagram symbol of the KMB4D0N30SA transistor

KMB4D0N30SA Transistor Specification

Transistor Code KMB4D0N30SA
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.038Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS

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