KMB2D0N60SA MOSFET Transistor

The KMB2D0N60SA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB2D0N60SA transistor as follows.

KMB2D0N60SA Transistor Specification

Transistor Code		KMB2D0N60SA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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