KMB012N30QA MOSFET Transistor

The KMB012N30QA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB012N30QA transistor as follows.

KMB012N30QA Transistor Specification

Transistor Code		KMB012N30QA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		FLP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.5nS
Total Gate Charge		27nC

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