KMB010P30QA MOSFET Transistor

The KMB010P30QA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB010P30QA transistor as follows.

KMB010P30QA Transistor Specification

Transistor Code		KMB010P30QA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		FLP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		635pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.3nS
Total Gate Charge		44.6nC

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