KI2312DS MOSFET Transistor

The KI2312DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KI2312DS transistor as follows.

KI2312DS Transistor Specification

Transistor Code		KI2312DS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Transistor SMD Code		C2
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.77A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	0.75W
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		0.85V
Total Gate Charge		11.2nC

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