KI2301BDS MOSFET Transistor

The KI2301BDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KI2301BDS transistor as follows.

KI2301BDS Transistor Specification

Transistor Code		KI2301BDS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		L1
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		4.5nC

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