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KHB9D5N20P MOSFET Transistor

The KHB9D5N20P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB9D5N20P transistor as follows.

Circuit diagram symbol of the KHB9D5N20P transistor

KHB9D5N20P Transistor Specification

Transistor Code KHB9D5N20P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.345Ohm
Power Dissipation (Maximum) PD 87W
Drain-Source Capacitance 96pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 62nS

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