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KHB9D0N90F1 MOSFET Transistor

The KHB9D0N90F1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB9D0N90F1 transistor as follows.

Circuit diagram symbol of the KHB9D0N90F1 transistor

KHB9D0N90F1 Transistor Specification

Transistor Code KHB9D0N90F1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220IS
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.12Ohm
Power Dissipation (Maximum) PD 68W
Drain-Source Capacitance 183pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Total Gate Charge 75nC

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