KHB9D0N50P1 MOSFET Transistor

The KHB9D0N50P1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB9D0N50P1 transistor as follows.

KHB9D0N50P1 Transistor Specification

Transistor Code		KHB9D0N50P1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	135W
Drain-Source Capacitance		155.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS

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