KHB8D8N25P MOSFET Transistor

The KHB8D8N25P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB8D8N25P transistor as follows.

KHB8D8N25P Transistor Specification

Transistor Code		KHB8D8N25P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	74W
Drain-Source Capacitance		117pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		69nS

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