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KHB7D5N60P1 MOSFET Transistor

The KHB7D5N60P1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB7D5N60P1 transistor as follows.

Circuit diagram symbol of the KHB7D5N60P1 transistor

KHB7D5N60P1 Transistor Specification

Transistor Code KHB7D5N60P1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 147W
Drain-Source Capacitance 121.8pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 130nS

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