KHB4D5N60P MOSFET Transistor

The KHB4D5N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB4D5N60P transistor as follows.

KHB4D5N60P Transistor Specification

Transistor Code		KHB4D5N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	106W
Drain-Source Capacitance		66pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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