KHB4D0N80P1 MOSFET Transistor

The KHB4D0N80P1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB4D0N80P1 transistor as follows.

KHB4D0N80P1 Transistor Specification

Transistor Code		KHB4D0N80P1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		68pF
Operating Junction Temperature (Maximum)		160°C
Rise Time		59.5nS

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