KHB2D0N60F MOSFET Transistor

The KHB2D0N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB2D0N60F transistor as follows.

KHB2D0N60F Transistor Specification

Transistor Code		KHB2D0N60F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220IS
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.8Ohm
Power Dissipation (Maximum)	PD	23W
Drain-Source Capacitance		46pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS

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