KHB1D9N60D MOSFET Transistor

The KHB1D9N60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB1D9N60D transistor as follows.

KHB1D9N60D Transistor Specification

Transistor Code		KHB1D9N60D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.8Ohm
Power Dissipation (Maximum)	PD	44W
Drain-Source Capacitance		45.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS

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