KHB1D0N60G MOSFET Transistor

The KHB1D0N60G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB1D0N60G transistor as follows.

KHB1D0N60G Transistor Specification

Transistor Code		KHB1D0N60G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6.5Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		23.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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