KHB019N20P1 MOSFET Transistor

The KHB019N20P1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB019N20P1 transistor as follows.

KHB019N20P1 Transistor Specification

Transistor Code		KHB019N20P1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS

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