KHB011N40F2 MOSFET Transistor

The KHB011N40F2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB011N40F2 transistor as follows.

KHB011N40F2 Transistor Specification

Transistor Code		KHB011N40F2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220IS
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	44W
Drain-Source Capacitance		168pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS

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