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KHB011N40F1 MOSFET Transistor

The KHB011N40F1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KHB011N40F1 transistor as follows.

Circuit diagram symbol of the KHB011N40F1 transistor

KHB011N40F1 Transistor Specification

Transistor Code KHB011N40F1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220IS
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 44W
Drain-Source Capacitance 168pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 65nS

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