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KF3N60I MOSFET Transistor

The KF3N60I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KF3N60I transistor as follows.

Circuit diagram symbol of the KF3N60I transistor

KF3N60I Transistor Specification

Transistor Code KF3N60I
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.8Ohm
Power Dissipation (Maximum) PD 44.6W
Drain-Source Capacitance 45pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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