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KF10N65F MOSFET Transistor

The KF10N65F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KF10N65F transistor as follows.

Circuit diagram symbol of the KF10N65F transistor

KF10N65F Transistor Specification

Transistor Code KF10N65F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220IS
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.95Ohm
Power Dissipation (Maximum) PD 46W
Drain-Source Capacitance 140pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 24nC

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