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KF10N60P MOSFET Transistor

The KF10N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KF10N60P transistor as follows.

Circuit diagram symbol of the KF10N60P transistor

KF10N60P Transistor Specification

Transistor Code KF10N60P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.59Ohm
Power Dissipation (Maximum) PD 178W
Drain-Source Capacitance 140pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Total Gate Charge 26nC

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