KDV303N MOSFET Transistor

The KDV303N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDV303N transistor as follows.

KDV303N Transistor Specification

Transistor Code		KDV303N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.68A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.5nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		1.64nC

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