KDS5670 MOSFET Transistor

The KDS5670 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDS5670 transistor as follows.

KDS5670 Transistor Specification

Transistor Code		KDS5670
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		685pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		49nC

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