KDD3670 MOSFET Transistor

The KDD3670 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDD3670 transistor as follows.

KDD3670 Transistor Specification

Transistor Code		KDD3670
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		265pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		57nC

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