KDB3672 MOSFET Transistor

The KDB3672 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDB3672 transistor as follows.

KDB3672 Transistor Specification

Transistor Code		KDB3672
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		247pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		24nC

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