KDB3652 MOSFET Transistor

The KDB3652 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDB3652 transistor as follows.

KDB3652 Transistor Specification

Transistor Code		KDB3652
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	61A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		41nC

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