KDB3632 MOSFET Transistor

The KDB3632 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDB3632 transistor as follows.

KDB3632 Transistor Specification

Transistor Code		KDB3632
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	310W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		39nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		84nC

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