KDB15N50 MOSFET Transistor

The KDB15N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KDB15N50 transistor as follows.

KDB15N50 Transistor Specification

Transistor Code		KDB15N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5.4nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		33nC

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