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K1109 MOSFET Transistor

The K1109 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the K1109 transistor as follows.

Circuit diagram symbol of the K1109 transistor

K1109 Transistor Specification

Transistor Code K1109
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-23_SOT-323
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 1V
Drain Current (Maximum) ID 0.01A
Power Dissipation (Maximum) PD 0.08W
Operating Junction Temperature (Maximum) 125°C

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