IXZR16N60B MOSFET Transistor

The IXZR16N60B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXZR16N60B transistor as follows.

IXZR16N60B Transistor Specification

Transistor Code		IXZR16N60B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.53Ohm
Power Dissipation (Maximum)	PD	350W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.6V

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