IXZH10N50LB MOSFET Transistor

The IXZH10N50LB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXZH10N50LB transistor as follows.

IXZH10N50LB Transistor Specification

Transistor Code		IXZH10N50LB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AD
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		78pF
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.95V

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