IXZH10N50LA MOSFET Transistor

The IXZH10N50LA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXZH10N50LA transistor as follows.

IXZH10N50LA Transistor Specification

Transistor Code		IXZH10N50LA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AD
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		78pF
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.95V

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