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IXZ316N60 MOSFET Transistor

The IXZ316N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXZ316N60 transistor as follows.

Circuit diagram symbol of the IXZ316N60 transistor

IXZ316N60 Transistor Specification

Transistor Code IXZ316N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package SMD-6
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.47Ohm
Power Dissipation (Maximum) PD 880W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 5.5V

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