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IXUN350N10 MOSFET Transistor

The IXUN350N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXUN350N10 transistor as follows.

Circuit diagram symbol of the IXUN350N10 transistor

IXUN350N10 Transistor Specification

Transistor Code IXUN350N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-227B
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 350A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0025Ohm
Power Dissipation (Maximum) PD 830W
Drain-Source Capacitance 3pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 175nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 640nC

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