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IXUC200N055 MOSFET Transistor

The IXUC200N055 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXUC200N055 transistor as follows.

Circuit diagram symbol of the IXUC200N055 transistor

IXUC200N055 Transistor Specification

Transistor Code IXUC200N055
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS-220
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 200A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0051Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 175°C
Rise Time 115nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 200nC

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