IXTY1N80 MOSFET Transistor

The IXTY1N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTY1N80 transistor as follows.

IXTY1N80 Transistor Specification

Transistor Code		IXTY1N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C
Rise Time		710nS
Gate-Threshold Voltage (Maximum)		4.5V

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