IXTY12N06T MOSFET Transistor

The IXTY12N06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTY12N06T transistor as follows.

IXTY12N06T Transistor Specification

Transistor Code		IXTY12N06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	33W
Operating Junction Temperature (Maximum)		175°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V

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