IXTY10P15T MOSFET Transistor

The IXTY10P15T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTY10P15T transistor as follows.

IXTY10P15T Transistor Specification

Transistor Code		IXTY10P15T
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	83W
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		36nC

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