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IXTY08N50D2 MOSFET Transistor

The IXTY08N50D2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTY08N50D2 transistor as follows.

Circuit diagram symbol of the IXTY08N50D2 transistor

IXTY08N50D2 Transistor Specification

Transistor Code IXTY08N50D2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.6Ohm
Power Dissipation (Maximum) PD 60W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 12.7nC

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