IXTY08N100D2 MOSFET Transistor

The IXTY08N100D2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTY08N100D2 transistor as follows.

IXTY08N100D2 Transistor Specification

Transistor Code		IXTY08N100D2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	21Ohm
Power Dissipation (Maximum)	PD	60W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		14.6nC

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